Full text loading...
(Color online) The leakage current density vs the electric field.
(Color online) The retention characteristics at under a positive stress voltage on the gate. The inset illustrates the charge loss mechanisms of MANOS devices in a conventional retention.
(Color online) (a) The erase saturation level improvements by HPDOA. Inset of (a) illustrates the electron backtunneling current during erasing operation. (b) cycling endurance characteristics.
(Color online) The SIMS depth profile of the HPDOA MANOS devices. The inset shows the change of during erase operation with a high voltage of in quasistatic .
(Color online) The charge trapping characteristics of HPDOA capacitor. (a) Stress current-time traces during CVS at . (b) shifts as a function of accumulated charge injection at .
Article metrics loading...