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Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices
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10.1063/1.2812570
/content/aip/journal/apl/91/19/10.1063/1.2812570
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2812570
/content/aip/journal/apl/91/19/10.1063/1.2812570
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/content/aip/journal/apl/91/19/10.1063/1.2812570
2007-11-09
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2812570
10.1063/1.2812570
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