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Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices
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10.1063/1.2812570
/content/aip/journal/apl/91/19/10.1063/1.2812570
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2812570
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The leakage current density vs the electric field.

Image of FIG. 2.
FIG. 2.

(Color online) The retention characteristics at under a positive stress voltage on the gate. The inset illustrates the charge loss mechanisms of MANOS devices in a conventional retention.

Image of FIG. 3.
FIG. 3.

(Color online) (a) The erase saturation level improvements by HPDOA. Inset of (a) illustrates the electron backtunneling current during erasing operation. (b) cycling endurance characteristics.

Image of FIG. 4.
FIG. 4.

(Color online) The SIMS depth profile of the HPDOA MANOS devices. The inset shows the change of during erase operation with a high voltage of in quasistatic .

Image of FIG. 5.
FIG. 5.

(Color online) The charge trapping characteristics of HPDOA capacitor. (a) Stress current-time traces during CVS at . (b) shifts as a function of accumulated charge injection at .

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/content/aip/journal/apl/91/19/10.1063/1.2812570
2007-11-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2812570
10.1063/1.2812570
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