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Cross-sectional illustration of an OFET. The chemical structures of the SAMs used in this study are also shown.
Transfer characteristics for the device with Chloro-SAM. The triangle and circle indicate the source-drain current before and after gate bias stressing, respectively. The stress conditions were and for .
Threshold voltage shift as a function of stress time for devices with various chemical species for the surface. The stress bias values were and . The solid lines denote the curves fitted by using Eq. (1).
Relationship between the chemical species of the insulator surface and the shift. The amount of shift was measured after stressing at and for . The inset shows the relationship between the mobility and the chemical species of the insulator surface. The chain length of SAMs increases from left to right.
Fitting parameters of Eq. (1) for devices with various types of SAMs. and indicate the typical activation energy for trap creation and slope of the distribution of the activation energy, respectively.
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