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Threshold voltage stability of organic field-effect transistors for various chemical species in the insulator surface
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10.1063/1.2812573
/content/aip/journal/apl/91/19/10.1063/1.2812573
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2812573

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional illustration of an OFET. The chemical structures of the SAMs used in this study are also shown.

Image of FIG. 2.
FIG. 2.

Transfer characteristics for the device with Chloro-SAM. The triangle and circle indicate the source-drain current before and after gate bias stressing, respectively. The stress conditions were and for .

Image of FIG. 3.
FIG. 3.

Threshold voltage shift as a function of stress time for devices with various chemical species for the surface. The stress bias values were and . The solid lines denote the curves fitted by using Eq. (1).

Image of FIG. 4.
FIG. 4.

Relationship between the chemical species of the insulator surface and the shift. The amount of shift was measured after stressing at and for . The inset shows the relationship between the mobility and the chemical species of the insulator surface. The chain length of SAMs increases from left to right.

Tables

Generic image for table
Table I.

Fitting parameters of Eq. (1) for devices with various types of SAMs. and indicate the typical activation energy for trap creation and slope of the distribution of the activation energy, respectively.

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/content/aip/journal/apl/91/19/10.1063/1.2812573
2007-11-09
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold voltage stability of organic field-effect transistors for various chemical species in the insulator surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2812573
10.1063/1.2812573
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