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Scanning gate microscopy of copper phthalocyanine field effect transistors
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10.1063/1.2812575
/content/aip/journal/apl/91/19/10.1063/1.2812575
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2812575
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of the experimental setup. A conductive AFM probe scans above the OFET channel. is applied to the right electrode and the left one is grounded. and the back-gate voltage can be applied individually. is measured using a current amplifier. (b) AFM image of the sample. The CuPc thin film is deposited on top of the entire substrate. (c) A current mapping image taken in NC mode with and . Intensity caused by current leakage from the tip to the grounded electrode is observed on the entire left electrode. The dotted lines indicate the edges of the electrodes. The color bar indicates the current across the channel. (d) A current mapping image taken with interleave mode ( above the surface) with and . The dotted lines indicate the edges of electrodes.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Optical microscope image of a sample fabricated using a square-metal-meshed mask. The dotted line indicates the area where the thick CuPc film is deposited. (b) Current mapping image obtained around the center of the sample with and . White region represents enhancement of when the tip exists there. The dotted lines indicate the edges of the electrodes. The color bar indicates the current variation across the channel.

Image of FIG. 3.
FIG. 3.

(Color online) Line profiles of the current-variation-mapping image obtained by averaging data over 100 repetitions while scanning along the broken line in Fig. 2(b). of (upper, red line) and (middle, blue line) were applied on the right electrode with . The bottom (black) line shows the corresponding topographic profile. The arrows indicate the corresponding vertical axes for the different curves. The inset shows a schematic band diagram of the OFET with biasing on the right electrode.

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/content/aip/journal/apl/91/19/10.1063/1.2812575
2007-11-09
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning gate microscopy of copper phthalocyanine field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/19/10.1063/1.2812575
10.1063/1.2812575
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