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-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal
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10.1063/1.2749847
/content/aip/journal/apl/91/2/10.1063/1.2749847
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2749847
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Detail process flow of the proposed TFT with the CuMg source/drain and back-channel-etched (BCE) inverted-staggered TFT structure.

Image of FIG. 2.
FIG. 2.

Raman analysis of and film. The inset shows the SEM surface profile of .

Image of FIG. 3.
FIG. 3.

(a) Transfer characteristics ( curve) of -doped-layer free TFT with the CuMg source/drain metal after the annealing process in the vacuum chamber. The channel length and width are 12 and , respectively. (b) Output characteristics ( curve) of -doped-layer-free TFT with the CuMg source/drain metal after the , annealing process in the vacuum chamber.

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/content/aip/journal/apl/91/2/10.1063/1.2749847
2007-07-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: n+-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2749847
10.1063/1.2749847
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