Full text loading...
Scanning electron micrograph of a (010) facet of a tilted InS single crystal with an in-plane 90° orientation domain. The insets show a typical EBSD pattern of the surface (a) and a result of its simulation after indexing (b).
XPS of the valence band region and of the core levels: I of the film (a) and In of the crystal (b).
Preliminary observation of current-voltage characteristic of a transparent diode. Insets: The same in a semilogarithmic scale (a) and scheme of the band alignment (b).
Article metrics loading...