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Small valence band offset in (010) heterojunction diodes
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10.1063/1.2753094
/content/aip/journal/apl/91/2/10.1063/1.2753094
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2753094
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron micrograph of a (010) facet of a tilted InS single crystal with an in-plane 90° orientation domain. The insets show a typical EBSD pattern of the surface (a) and a result of its simulation after indexing (b).

Image of FIG. 2.
FIG. 2.

XPS of the valence band region and of the core levels: I of the film (a) and In of the crystal (b).

Image of FIG. 3.
FIG. 3.

Preliminary observation of current-voltage characteristic of a transparent diode. Insets: The same in a semilogarithmic scale (a) and scheme of the band alignment (b).

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/content/aip/journal/apl/91/2/10.1063/1.2753094
2007-07-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Small valence band offset in (010) InS∕CuI heterojunction diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2753094
10.1063/1.2753094
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