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Epitaxial growth of on GaN templates by oxide molecular beam epitaxy
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10.1063/1.2753719
/content/aip/journal/apl/91/2/10.1063/1.2753719
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2753719
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED pattern of (a) GaN and (b) of (011) grown high temperature without buffer layer (c) during growth of low temperature (011) buffer layer, and (d) during high temperature growth (011).

Image of FIG. 2.
FIG. 2.

(Color online) AFM image of a -thick on GaN. The image size is and rms is .

Image of FIG. 3.
FIG. 3.

(Color online) (a) XRD pattern of . (b) Rocking curve of . (c) XRD pole figure scan of (101) and GaN .

Image of FIG. 4.
FIG. 4.

Proposed in-plane epitaxial relationship between and GaN.

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/content/aip/journal/apl/91/2/10.1063/1.2753719
2007-07-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of ZrO2 on GaN templates by oxide molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2753719
10.1063/1.2753719
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