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Decrease in switching voltage fluctuation of structure by process control
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Initial resistance switching behaviors and switching voltages vs the number of cycles measured for films grown at (b) (NiO-5) and (c) (NiO-1.5) working pressure of Ar and mixture gases.

Image of FIG. 2.
FIG. 2.

(Color online) Glancing scan XRD pattern measured for NiO-1.5 and NiO-5. The green dots indicate the new Ni–Pt phase.

Image of FIG. 3.
FIG. 3.

(Color online) Depth profiling of Ni core level spectra of structures obtained for (a) NiO-1.5 and (b) NiO-5 after every ion sputtering. As going from the bottom to the top, the spectra describe spectral changes from the top to the bottom Pt electrode regions. (c) Chemical states of Ni region in the layer between both electrodes.

Image of FIG. 4.
FIG. 4.

(Color online) (a) TEM image obtained at the interface between the and Pt bottom electrode and HRTEM images for region near (b) pure Pt and (c) Ni–Pt phase. The inset of (a) is the diffractogram obtained from the area inside green-dotted square, exhibiting a new set of spots much different from the cubic structure of Pt electrode. Insets of (b) and (c) are the diffractograms obtained from the area inside red-dotted square of the film above pure Pt and Ni–Pt electrode, respectively. The red arrows in the inset of (c) indicate defective structures having a typical satellite structure originated from vacancies.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Decrease in switching voltage fluctuation of Pt∕NiOx∕Pt structure by process control