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Phonon-induced shot noise enhancement in resonant tunneling structures
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10.1063/1.2756127
/content/aip/journal/apl/91/2/10.1063/1.2756127
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756127
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Effect of electron-phonon coupling on the characteristics in the structure at zero temperature and for various coupling constants: (solid line), (dot-dashed line), and (dashed line). The Fermi level in the emitter contact: .

Image of FIG. 2.
FIG. 2.

The Fano factor is plotted vs the bias for the same devices as those in Fig. 1. Note that on the noise behavior in different bias regions: Poissonian at low and very high bias; sub-Poissonian in the region close to the resonance; and super-Poissonian in the PAT region.

Image of FIG. 3.
FIG. 3.

The Fano factor is plotted vs the bias for devices with different emitter Fermi energies: (solid line), (dot dashed-line), and (dashed line). The PAT peak is suppressed as increases.

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/content/aip/journal/apl/91/2/10.1063/1.2756127
2007-07-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phonon-induced shot noise enhancement in resonant tunneling structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756127
10.1063/1.2756127
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