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Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets
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10.1063/1.2756270
/content/aip/journal/apl/91/2/10.1063/1.2756270
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756270
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Scanning electron micrograph of one of the hybrid semiconductor/ferromagnetic devices, with main parts and coordinate system indicated. (b) MFM image of Co NMs with various ARs (length of each NM is ). The bright and dark regions indicate magnetic contrast. (c) MFM image of the Co NM of the device of (a). This is a composite of several scans as indicated by the break in the image.

Image of FIG. 2.
FIG. 2.

(Color online) Main panel shows the comparison of the MR of the Co NM, the QW, and the control device for a tilt angle within of the 2DEG plane. Black (red) curves correspond to sweeping magnetic field down (up). The upper panel illustrates the magnetization state of the NM and the corresponding fringing fields emanating into the QW for characteristic values of the external magnetic field relative to the coercive and saturation fields of the NM. In the center panel, the solid (dashed) line indicates the magnetization at .

Image of FIG. 3.
FIG. 3.

(Color online) Upper panel shows the MR of one of the hybrid devices for several tilt angles. With increasing , successive curves are shifted upwards in increments of . Lower panel is a similar plot for the control sample. There is no offset in these data.

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/content/aip/journal/apl/91/2/10.1063/1.2756270
2007-07-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large hysteretic magnetoresistance in high-mobility semiconductor quantum wires bridged by single-domain nanomagnets
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756270
10.1063/1.2756270
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