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Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
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10.1063/1.2756291
/content/aip/journal/apl/91/2/10.1063/1.2756291
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756291
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic band alignment in the structures with (a) dome and (b) hut islands. Positions of the electron valleys and the heavy hole bands are shown.

Image of FIG. 2.
FIG. 2.

(Color online) AFM images of the structures with (a) dome islands grown at (image size of ) and (b) hut islands grown at (image size of ). The color scale in the images corresponds to the local surface height. Take note of the large difference in scale of the AFM images.

Image of FIG. 3.
FIG. 3.

PL spectra of the structures with islands grown at (1) , (2) , (3) , and (4) . The PL spectra are normalized on the maximum of the signal from the islands and shifted in the vertical direction for clarity.

Image of FIG. 4.
FIG. 4.

Experimental dependence of the island-related PL peak position on . The vertical lines show the full width at half maximum of the PL peaks for each . The dashed line corresponds to the transition from dome to hut islands.

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/content/aip/journal/apl/91/2/10.1063/1.2756291
2007-07-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756291
10.1063/1.2756291
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