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Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy
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10.1063/1.2756293
/content/aip/journal/apl/91/2/10.1063/1.2756293
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756293
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of pyramid-shaped InN nanocolumns grown close to the dissociation temperature . (b) SEM image of InN nanocolumns grown at optimal temperature .

Image of FIG. 2.
FIG. 2.

(a) RHEED pattern of InN nanocolumns superimposed to the AlN-buffer one. (b) SAED image revealing three different diffraction patterns corresponding to Si(111) (squares), AlN buffer (circles), and InN nanocolumns (triangles).

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional HRTEM image of the interface where step and planar defects are clearly seen. (b) Cross-sectional HRTEM image of the thin layer developing at the interface between InN nanocolumns and the bare Si(111).

Image of FIG. 4.
FIG. 4.

(a) Cross-sectional HRTEM image revealing an atomically flat and abrupt interface between the AlN buffer layer and the InN nanocolumns. (b) Fourier power spectrum of the lattice image in (a). The two sets of spots observed correspond to the InN nanocolumns and HT-AlN buffer, respectively. The reflections contributing to the Bragg-filtered image of (c) are also shown. (c) Bragg filtered HRTEM image revealing an array of periodically spaced misfit dislocations at the interface between the AlN buffer layer and the InN nanocolumns.

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/content/aip/journal/apl/91/2/10.1063/1.2756293
2007-07-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756293
10.1063/1.2756293
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