1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Schottky barrier characteristics and interfacial reactions of Ti on
Rent:
Rent this article for
USD
10.1063/1.2756313
/content/aip/journal/apl/91/2/10.1063/1.2756313
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756313
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schottky barrier heights and ideality factors of on at different annealing conditions.

Image of FIG. 2.
FIG. 2.

(Color online) characteristics of Schottky diodes.

Image of FIG. 3.
FIG. 3.

(a) HRTEM micrograph of the metallizations annealed at for . (b) TEM micrograph showing the sample annealed at for . (c) HRTEM image showing the void. (d) HRTEM image showing crystalline TiAs and layer.

Image of FIG. 4.
FIG. 4.

Arrhenius plot used to extract the reaction activation energy between Ti and InAlAs. Solid symbols are experimental results. Open circle is a prediction for -annealed sample.

Loading

Article metrics loading...

/content/aip/journal/apl/91/2/10.1063/1.2756313
2007-07-11
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Schottky barrier characteristics and interfacial reactions of Ti on n-In0.52Al0.48As
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756313
10.1063/1.2756313
SEARCH_EXPAND_ITEM