1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Bias-induced insulator-metal transition in organic electronics
Rent:
Rent this article for
USD
10.1063/1.2756354
/content/aip/journal/apl/91/2/10.1063/1.2756354
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756354
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Hysteretic current as the function of sweeping bias of the model metal/OSE/metal electronics at . The size of OSE is and the linear voltage sweep rate is at . The insert is the threshold voltage as a function of the OSE chain length .

Image of FIG. 2.
FIG. 2.

(Color online) High (solid lines) and low (dash-dot lines) conductance states triggered by the upsweeping bias. (a) Transmission coefficient . The vertical dot lines indicate the window between and for the charge transmission; (b) lattice distortion of the OSE substructure.

Image of FIG. 3.
FIG. 3.

(Color online) Voltage evolution of six energy levels of the OSE for upsweeping (a) and downsweeping biases (b). The arrows indicate the crossover of energy levels.

Loading

Article metrics loading...

/content/aip/journal/apl/91/2/10.1063/1.2756354
2007-07-13
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bias-induced insulator-metal transition in organic electronics
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2756354
10.1063/1.2756354
SEARCH_EXPAND_ITEM