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Electric-field control of tunneling magnetoresistance effect in a quantum-dot spin valve
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10.1063/1.2759264
/content/aip/journal/apl/91/2/10.1063/1.2759264
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2759264
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Scanning electron micrograph of our quantum-dot spin-valve device. (b) Differential conductance as a function of and at . The regions enclosed by the dashed line show Coulomb blockade regime. The two white areas outside the enclosed regions are beyond the limits of measurement range. (c) The conductance as a function of measured at .

Image of FIG. 2.
FIG. 2.

(Color online) TMR changes with . The MR ratio (%) is denoted as , where and are the tunnel currents for zero field and for a magnetic field of , respectively. The TMR value is defined as the maximum change in the MR value showing hysteretic behavior [see inset of Fig. 2(b)]. The gate voltages are (a) 2.78, (b) 2.79, (c) 2.80, and (d) .

Image of FIG. 3.
FIG. 3.

(Color online) Magnitude and sign changes of the TMR with (left axis) together with the Coulomb oscillation data given in Fig. 1(c) (right axis).

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/content/aip/journal/apl/91/2/10.1063/1.2759264
2007-07-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric-field control of tunneling magnetoresistance effect in a Ni∕InAs∕Ni quantum-dot spin valve
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/2/10.1063/1.2759264
10.1063/1.2759264
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