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eneSurfactant effects associated with Te-doped InPAs alloys
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10.1063/1.2801385
/content/aip/journal/apl/91/20/10.1063/1.2801385
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2801385
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM images of the surface of (a) Si-doped (vertical ) and (b) Te-doped (vertical ).

Image of FIG. 2.
FIG. 2.

(Color online) The distribution relationship between the InAs molar fraction and the vapor fraction for InPAs-doped with Si, Zn, or Te. All heterolayers grown with Si (▴) are best fit by a single distribution coefficient, (∎), while heterolayers grown with Zn (∎) are plotted without a model curve due to the limited data. Layers grown with Te (◆) are fit best by a separate distribution coefficient, (—). The , , and ratios were maintained at , , and , respectively. These dopant ratios produced carrier densities of approximately in InPAs.

Image of FIG. 3.
FIG. 3.

(Color online) SIMS depth profiles of Te, As, and P in a Te-doped InPAs multilayer: Te (—), As (▴), and P (∎). The sample is a nine-layer structure grown with varying DETe, , and flows. In the labeling at the top of the figure, “” specifies the vapor-phase ratio of DETe to and “” specifies the vapor-phase ratio of to . The ratio has been multiplied by and the ratio has been multiplied by .

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/content/aip/journal/apl/91/20/10.1063/1.2801385
2007-11-15
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: eneSurfactant effects associated with Te-doped InPAs alloys
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2801385
10.1063/1.2801385
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