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Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing
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Image of FIG. 1.
FIG. 1.

High resolution transmission electron microscopy pictures of a layer on Si substrate after laser annealing. (a) The sample was laser annealed using five laser pulses each with an energy intensity of . Defect clusters with a size of were observed. (b) With a laser annealing condition of five pulses, the defect clusters were dissolved, and defect-free single crystalline SiGeSn was formed. This optimized laser annealing condition melted the region with implantation-induced damage and subsequent recrystallation obtained a single crystalline layer.

Image of FIG. 2.
FIG. 2.

(a) Rutherford backscattering and channeling spectra for the Sn implanted sample. Spectra plotted using (i) solid and (ii) dotted lines are the random and channeling spectra, respectively, for the as-implanted sample. Lines (iii) and (iv) are the channeling spectra after annealing using five laser pulses each at an energy fluence of 115 and , respectively. The reduction of the Sn peak (inset) after laser annealing at for five pulses indicates enhanced Sn substitutionality. Dependence of backscattering yield and substitutional incorporation of (b) Sn and Ge on laser power are investigated. Sn and Ge substitutionality improved, as the laser power was increased from . Subsequent increase in laser fluence resulted in significant Sn and Ge drive in, and a reduction in the average concentration of Sn and Ge.

Image of FIG. 3.
FIG. 3.

(a) Raman spectra of implanted with Sn and B, followed by laser annealing (LA) with five laser pulses. The Raman shift by to the right was caused by substitutional incorporation of Sn in , leading to increased in-plane compressive strain. (b) Dependence of Si–Si Raman peak on laser energy density is investigated. Increasing the laser energy density increases the compressive stress in the film due to increased Sn substitutionality.

Image of FIG. 4.
FIG. 4.

Sheet resistance of implanted with Sn and B after laser annealing with various energy intensities. Sheet resistance improvement brought about by Sn preamorphization resulted in confinement of boron to a reduced junction depth and a lower sheet resistance was achieved. The diffusion of B at higher laser energy leads to an increase in .


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Scitation: Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing