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Charge storage characteristics of Au nanocrystals embedded in high- gate dielectrics on Si
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10.1063/1.2804567
/content/aip/journal/apl/91/20/10.1063/1.2804567
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2804567
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HRTEM image of Au nanocrystals embedded in the (a) and (b) matrices.

Image of FIG. 2.
FIG. 2.

(Color online) The relations between gate voltage and (a) flatband voltage. (b) Stored charges in a MOS capacitor. The insets in (a) and (b) show the high frequency relations of MOS capacitors embedded with/without Au nanocrystals embedded in the and , respectively.

Image of FIG. 3.
FIG. 3.

The illustrative band diagram of a MOS structure with positive applied voltage at metal gate.

Image of FIG. 4.
FIG. 4.

(Color online) Charge retention characteristics of MOS capacitors employing and as gate dielectric stressed by gate voltage for .

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/content/aip/journal/apl/91/20/10.1063/1.2804567
2007-11-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge storage characteristics of Au nanocrystals embedded in high-k gate dielectrics on Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2804567
10.1063/1.2804567
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