banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical performance of gate dielectric films deposited by atomic layer deposition on
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

The area-normalized capacitance-voltage curves (solid lines) of MOS capacitors (, , and ) and an ideal curve (dashed line) with an amorphous as-deposited gate dielectric layer. The upper inset shows the leakage current density as a function of electric field across the gate dielectric in capacitors with amorphous , crystalline , and amorphous thin films. The lower inset shows the Fowler-Nordheim tunneling fit for the amorphous MOS capacitor. Note that a different test equipment with a lower sensitivity at low current values was used to measure the amorphous sample.

Image of FIG. 2.
FIG. 2.

X-ray photoemission spectra of (a) , (b) a film, and (c) a film. (d) The O peak and inelastic scattering loss for a film.

Image of FIG. 3.
FIG. 3.

Comparison of the leakage current density vs electric field response of various gate oxide/ devices reported in the literature. The data from the literature were adapted as accurately as possible using a linear approximation.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC