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Electrical performance of gate dielectric films deposited by atomic layer deposition on
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10.1063/1.2805742
/content/aip/journal/apl/91/20/10.1063/1.2805742
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2805742
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The area-normalized capacitance-voltage curves (solid lines) of MOS capacitors (, , and ) and an ideal curve (dashed line) with an amorphous as-deposited gate dielectric layer. The upper inset shows the leakage current density as a function of electric field across the gate dielectric in capacitors with amorphous , crystalline , and amorphous thin films. The lower inset shows the Fowler-Nordheim tunneling fit for the amorphous MOS capacitor. Note that a different test equipment with a lower sensitivity at low current values was used to measure the amorphous sample.

Image of FIG. 2.
FIG. 2.

X-ray photoemission spectra of (a) , (b) a film, and (c) a film. (d) The O peak and inelastic scattering loss for a film.

Image of FIG. 3.
FIG. 3.

Comparison of the leakage current density vs electric field response of various gate oxide/ devices reported in the literature. The data from the literature were adapted as accurately as possible using a linear approximation.

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/content/aip/journal/apl/91/20/10.1063/1.2805742
2007-11-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2805742
10.1063/1.2805742
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