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Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors
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10.1063/1.2812577
/content/aip/journal/apl/91/20/10.1063/1.2812577
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2812577
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Si nanowire FET. (a) Top view of the fabricated nanowire FET with SEM images of nanowires. The scale bar in the SEM image denotes . Cross-sectional TEM images of nanowire after the oxidation conditions of (b) (device A), (c) (device B), and (d) annealing (device C). The scale bar denotes . The closed dashed lines denote the shapes and the arrows denote the volumes of after the oxidation and thermal treatment.

Image of FIG. 2.
FIG. 2.

Characteristics of (a) -type nanowire FETs and (b) -type nanowire FETs. Nanowires are oxidized at (A) (dotted lines), (B) (solid lines), and (C) annealing (dashed lines).

Image of FIG. 3.
FIG. 3.

Values of in each device for both (a) -type and (b) -type nanowire FETs. Open circles denote the corrected values and solid squares denote the average values of in each strain-controlled device.

Image of FIG. 4.
FIG. 4.

(Color online) Simulation result of horizontal stress distribution in Si nanowire. The region enclosed by dashed line (red) denote compressive stress and the region enclosed by solid line (blue) denotes tensile stress.

Image of FIG. 5.
FIG. 5.

Intensity as a function of Raman shift. Note the differences among the values of the FWHM Raman spectra of devices A, B, and C and bulk CZ-Si.

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/content/aip/journal/apl/91/20/10.1063/1.2812577
2007-11-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2812577
10.1063/1.2812577
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