Full text loading...
Si nanowire FET. (a) Top view of the fabricated nanowire FET with SEM images of nanowires. The scale bar in the SEM image denotes . Cross-sectional TEM images of nanowire after the oxidation conditions of (b) (device A), (c) (device B), and (d) annealing (device C). The scale bar denotes . The closed dashed lines denote the shapes and the arrows denote the volumes of after the oxidation and thermal treatment.
Characteristics of (a) -type nanowire FETs and (b) -type nanowire FETs. Nanowires are oxidized at (A) (dotted lines), (B) (solid lines), and (C) annealing (dashed lines).
Values of in each device for both (a) -type and (b) -type nanowire FETs. Open circles denote the corrected values and solid squares denote the average values of in each strain-controlled device.
(Color online) Simulation result of horizontal stress distribution in Si nanowire. The region enclosed by dashed line (red) denote compressive stress and the region enclosed by solid line (blue) denotes tensile stress.
Intensity as a function of Raman shift. Note the differences among the values of the FWHM Raman spectra of devices A, B, and C and bulk CZ-Si.
Article metrics loading...