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Al concentration profile in the as-implanted sample (TRIM simulation) (a). Net doping concentration profile (left scale), from the SCM data, and resistivity profile (right scale), from the SSRM data, for the samples annealed at in Ar (b), in Ar, (c) and in (d) for .
Concentration profiles of acceptors , compensating donors , and free holes for the samples annealed at in Ar (a), in Ar (b), and in (c) for .
Drift mobility profile determined from the and profiles for the samples annealed at in Ar (a), in Ar (b), and in (c) for .
Percentage activation ( implanted Al dose) and percentage compensation and as a function of the annealing temperature.
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