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Acceptor, compensation, and mobility profiles in multiple Al implanted
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10.1063/1.2813022
/content/aip/journal/apl/91/20/10.1063/1.2813022
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2813022
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Al concentration profile in the as-implanted sample (TRIM simulation) (a). Net doping concentration profile (left scale), from the SCM data, and resistivity profile (right scale), from the SSRM data, for the samples annealed at in Ar (b), in Ar, (c) and in (d) for .

Image of FIG. 2.
FIG. 2.

Concentration profiles of acceptors , compensating donors , and free holes for the samples annealed at in Ar (a), in Ar (b), and in (c) for .

Image of FIG. 3.
FIG. 3.

Drift mobility profile determined from the and profiles for the samples annealed at in Ar (a), in Ar (b), and in (c) for .

Image of FIG. 4.
FIG. 4.

Percentage activation ( implanted Al dose) and percentage compensation and as a function of the annealing temperature.

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/content/aip/journal/apl/91/20/10.1063/1.2813022
2007-11-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Acceptor, compensation, and mobility profiles in multiple Al implanted 4H‐SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2813022
10.1063/1.2813022
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