1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect
Rent:
Rent this article for
USD
10.1063/1.2813024
/content/aip/journal/apl/91/20/10.1063/1.2813024
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2813024
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) EL (a) and PL (b) spectra from the LED ( area) detected under various excitation conditions. The measurement temperatures and carrier injection parameters are indicated in the figures. The curves are shifted in vertical direction for clarity. Inset in (a) shows decomposition of the DRL spectrum into , , and , peaks for the EL spectra.

Image of FIG. 2.
FIG. 2.

The dependence of spectral position of EL peak on the value of forward bias (upper axis) and on the calculated maximal electric field (lower axis) in the LEDs at . Experimental data (open symbols) are fitted with Eq. (1) (solid line).

Image of FIG. 3.
FIG. 3.

(Color online) PL spectra from the LED at detected at the same light-excitation level and various circuit conditions. A sketch in the figure shows the scheme of the experiment. The curves are shifted in vertical direction for clarity. The constant current through the diode during PL measurements is indicated in the graph above each curve. For the uppermost curve, the LED contacts were shortened and for the curve beneath the contacts were open. Note a redshift of the BB peak positioned at for the largest diode current, i.e., for .

Loading

Article metrics loading...

/content/aip/journal/apl/91/20/10.1063/1.2813024
2007-11-14
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2813024
10.1063/1.2813024
SEARCH_EXPAND_ITEM