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(Color online) (a) Optical micrograph of a set of Cu TFTs (left) and schematic transistor cross section describing (right). (b) Transfer characteristics in the linear regime of pentacene TFTs (, ) with Cu and Au top electrodes. is drain bias. (c) -normalized transistor total resistance vs (TLM plots) of a set of Cu TFTs.
(Color online) (a) Experimental data of -normalized contact resistance as a function of gate bias at (markers). Solid line denotes calculation data based on the theory in Ref. 10, using in which and is an adjustable constant. (b) -normalized contact resistance vs gate bias at different temperatures from with interval. Each line contains 20 data of obtained from TLM plots.
(Color online) Arrhenius plots of contact mobility for (a) Cu and (b) Au contacts. The activation energy is calculated from the slope of fitting straight line, and are derived from the intersection point.
(Color online) Schematics of trap distribution and trap filling in the contact region at (a) low gate bias and (b) high gate bias. denote exponentially distributed density of trap states (solid line), where is derived from Fig. 3 and is estimated from . denote density of trapped charges (broken line), where is the Fermi-Dirac distribution at . The position (vertical dotted line) is selected for setting the total density of trapped charges (integration of ) equal in both cases of Cu and Au.
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