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Water passivation effect on polycrystalline silicon nanowires
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10.1063/1.2814033
/content/aip/journal/apl/91/20/10.1063/1.2814033
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2814033

Figures

Image of FIG. 1.
FIG. 1.

SEM picture of a device which contains six NW channels. Planar width and thickness of each NW is 70 and , respectively.

Image of FIG. 2.
FIG. 2.

Transfer characteristics of a device operating in dry and wet (DI water, denoted as DIW) environments.

Image of FIG. 3.
FIG. 3.

Transfer characteristics of a device operating in seven stages of alternative dry and wet environments. Period of each stage is about .

Tables

Generic image for table
Table I.

Comparisons of device performance parameters measured in dry and wet (DI water) environments.

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/content/aip/journal/apl/91/20/10.1063/1.2814033
2007-11-16
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Water passivation effect on polycrystalline silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2814033
10.1063/1.2814033
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