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Deep levels and carrier compensation in V-doped semi-insulating
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10.1063/1.2814058
/content/aip/journal/apl/91/20/10.1063/1.2814058
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2814058

Figures

Image of FIG. 1.
FIG. 1.

EPR spectra in sample A observed at for showing strong signals of (a) in darkness and (b) under light illumination (photon energies of ). The inset shows the spectrum with its hyperfine structures. Similar spectra were also observed in samples B and C.

Image of FIG. 2.
FIG. 2.

EPR spectra in sample D observed at for (a) in darkness and (b) under illumination.

Image of FIG. 3.
FIG. 3.

EPR spectrum in annealed sample A measured in darkness. The signals of B and SI-1 (left inset) were detected in annealed samples A and B, whereas in annealed sample C, only the SI-1 signal was observed (right inset).

Image of FIG. 4.
FIG. 4.

(Color online) Temperature dependence of the resistivity for samples A, C, and D before and after annealing at . Obtained values are indicated. Data for sample B are similar to those of sample A (not shown for clarity).

Tables

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Table I.

Concentrations of common impurities in V-doped SI samples determined by SIMS in . Concentrations of other impurities are in the range or lower.

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/content/aip/journal/apl/91/20/10.1063/1.2814058
2007-11-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/20/10.1063/1.2814058
10.1063/1.2814058
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