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The theoretic electrical resistivity of CdTe:Ge:Yb crystals as a function of Ge concentration for three different Yb concentrations (Yb 17—, Yb 18—, and Yb 19—). The points marked as S1 and S3 corresponds to the same crystals in Table I.
The experimental resistivity of CdTe:Ge:Yb crystals with the nominal Ge concentration of as a function of Yb concentration (dotted line is only a visual guide).
The evolution of electron lifetime as a function of the Yb concentration in CdTe:Ge:Yb crystals (dotted line is only as visual guide). is the electron lifetime of a typical undoped CdTe crystal. is the electron lifetime of a typical Ge-doped CdTe crystal (S4 in Table I).
Nominal (i.e., introduced intentionally at growth) and actual (measured) concentrations of the Ge and Yb dopants and the concentrations of acceptors and donors in CdTe:Ge:Yb crystals.
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