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Resistive memory switching in epitaxially grown NiO
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) XRD spectra of (a) NiO grown at on Pt, (b) NiO at RT on SRO, and (c) NiO at on SRO. (d) Rocking curve scans of NiO (111) peak for NiO on Pt and NiO (200) peak for NiO on SRO. (The indexless peak of 44.43° is a background signal coming from the XRD system.)

Image of FIG. 2.
FIG. 2.

(Color online) TEM images of NiO grown on SRO (a) at RT and (b) at . The inset shows the electron diffraction image at the interface region.

Image of FIG. 3.
FIG. 3.

(Color online) The characteristics of NiO grown (a) at on Pt, (b) at RT on SRO, and [(c) and (d)] at on SRO. All samples have Pt for top electrode except the sample in (d) where CRO is used for top electrode. The unfilled data with arrows show the initial voltage sweep data for the start of resistive memory switching. The asterisks denote the abrupt change of measured current at a voltage where the resistive transition occurs. The insets show the voltage sweeping order with directions denoted by arrows.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Retention and (b) endurance data obtained from where NiO is grown at . All data are obtained at the voltage bias of .

Image of FIG. 5.
FIG. 5.

(Color online) Initial characteristics of NiO grown at RT with Pt electrode (unfilled square), NiO at with Pt top electrode (filled triangle), and NiO at with CRO electrode (filled circle). All samples are grown on top of epitaxial SRO.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive memory switching in epitaxially grown NiO