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Air-stable -channel organic thin-film transistors with high field-effect mobility based on -bis(heptafluorobutyl)-3,4:9,10-perylene diimide
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10.1063/1.2803073
/content/aip/journal/apl/91/21/10.1063/1.2803073
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2803073

Figures

Image of FIG. 1.
FIG. 1.

(a) Chemical structure of PTCDI-C4F7. [(b) and (c)] Current-voltage characteristics for the PTCDI-C4F7 TFT prepared at : (b) output characteristics and (c) transfer characteristics . The measurement was conducted under nitrogen atmosphere.

Image of FIG. 2.
FIG. 2.

(Color online) AFM topography images of PTCDI-C4F7 thin films deposited onto OTS-treated substrates at various substrate temperatures: (a) , (b) , (c) , and (d) . Scale bar: .

Image of FIG. 3.
FIG. 3.

Air-stability measurements of a PTCDI-C4F7 TFT. Top: (solid squares) and relative humidity (open squares). Bottom: (circles) and (triangles). The dotted circle values at initial time correspond to an electrical performance in a nitrogen glove box.

Tables

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Table I.

Summary of field-effect mobilities , on/off ratios , and threshold voltages for PTCDI-C4F7 TFTs prepared on OTS-treated substrates at various substrate temperatures .

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/content/aip/journal/apl/91/21/10.1063/1.2803073
2007-11-20
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Air-stable n-channel organic thin-film transistors with high field-effect mobility based on N,N′-bis(heptafluorobutyl)-3,4:9,10-perylene diimide
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2803073
10.1063/1.2803073
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