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Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors
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10.1063/1.2807838
/content/aip/journal/apl/91/21/10.1063/1.2807838
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2807838
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic view of the air-gap single crystal transistor (SCFET) used here. The blue laser is shown through a semitransparent Au gate. Channel dimensions of the SCFETs explored in this experiment are and

Image of FIG. 2.
FIG. 2.

(Color online) Output characteristics of a rubrene SCFET in the dark vs under illumination. Please note the high off-current at indicative of the photoconduction process in the bulk.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Rise (black) and decay (red) of measured at and under continuous illumination. . The open squares indicate the points at which transfer characteristics shown in (b) were measured. (b) Transfer characteristics measured in the dark before (black) and after (red) illumination and under illumination (blue) indicating a strong shift. Inset: semilog plot of the same data. (c) Photocurrent transients in the microsecond time range measured by applying short light pulses in the drain area showing immediate recombination of the charge carriers.

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/content/aip/journal/apl/91/21/10.1063/1.2807838
2007-11-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2807838
10.1063/1.2807838
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