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Transmission electron microscopy of (a) the standard nanowire and (b) nanowire surrounded by pi-gate structures.
Comparison of typical characteristics of the pi-gate TFT-SONOS and the standard TFT-SONOSs with different channel width. The threshold voltages and SS of all devices are also extracted in the inset tables.
Output characteristics of the pi-gate TFT-SONOS and the standard TFT-SONOSs at .
(a) Programing and (b) erasing characteristics of the S1, SN, and PN devices. The devices with nanowire channels show that shift significantly increases comparing to S1 device.
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