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Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications
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10.1063/1.2813621
/content/aip/journal/apl/91/21/10.1063/1.2813621
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2813621
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transmission electron microscopy of (a) the standard nanowire and (b) nanowire surrounded by pi-gate structures.

Image of FIG. 2.
FIG. 2.

Comparison of typical characteristics of the pi-gate TFT-SONOS and the standard TFT-SONOSs with different channel width. The threshold voltages and SS of all devices are also extracted in the inset tables.

Image of FIG. 3.
FIG. 3.

Output characteristics of the pi-gate TFT-SONOS and the standard TFT-SONOSs at .

Image of FIG. 4.
FIG. 4.

(a) Programing and (b) erasing characteristics of the S1, SN, and PN devices. The devices with nanowire channels show that shift significantly increases comparing to S1 device.

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/content/aip/journal/apl/91/21/10.1063/1.2813621
2007-11-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2813621
10.1063/1.2813621
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