1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited as gate dielectric
Rent:
Rent this article for
USD
10.1063/1.2814052
/content/aip/journal/apl/91/21/10.1063/1.2814052
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2814052
/content/aip/journal/apl/91/21/10.1063/1.2814052
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/91/21/10.1063/1.2814052
2007-11-19
2014-10-22
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2814052
10.1063/1.2814052
SEARCH_EXPAND_ITEM