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Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
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10.1063/1.2815921
/content/aip/journal/apl/91/21/10.1063/1.2815921
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2815921
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Figures

Image of FIG. 1.
FIG. 1.

Monochromatic CL intensity maps for transitions at [(a)–(c)] and [(d)–(f)] obtained from CL spectral maps of samples with miscuts of 0.22°, 0.82°, and 2.3°. Arrows indicate the [11-20] miscut direction. The complementary character of the emission patterns at the two detections energies can be observed.

Image of FIG. 2.
FIG. 2.

(Color online) Normalized CL spectra for representative selected spots of samples with (a) 0.22°, (b) 0.82°, and (c) 2.3° miscut and large-area-averaged CL spectra of samples (d) 0.22°, (e) 0.82°, and (f) 2.3°.

Image of FIG. 3.
FIG. 3.

Relative In distribution obtained from -contrast SEM images for samples with (a) 0.22°, (b) 0.82°, and (c) 2.3°. Arrows indicate the [11-20] miscut direction. High backscatter intensity corresponds to high In content. Note that areas with high In content correspond to areas with lower CL emission energy in Fig. 1.

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/content/aip/journal/apl/91/21/10.1063/1.2815921
2007-11-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2815921
10.1063/1.2815921
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