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(Color online) (a) Basic structure of the fabricated lateral junction. The IDB separates the two polar domains. The N-polar domain and the Ga-polar domain have the same thickness of . The layer is thick and the -type GaN layer is thick. (b) Secondary ion mass spectroscopy depth profile of oxygen and magnesium on the N- and Ga-polar domains for the first of the total structure.
(Color online) Current-voltage characteristic between similar-type contacts on each corresponding domain.
(Color online) Current-voltage characteristic of the lateral polar junction. The inset shows an image of the device in forward bias operation demonstrating electroluminescence demarcating the boundary (as a straight line) between the two domains.
(Color online) Current-voltage characteristic under illumination of a Hg lamp under different rated powers.
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