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Forward tunneling effect and metal-insulator transition in the film/Si heterojunction
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10.1063/1.2817936
/content/aip/journal/apl/91/21/10.1063/1.2817936
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2817936
/content/aip/journal/apl/91/21/10.1063/1.2817936
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/content/aip/journal/apl/91/21/10.1063/1.2817936
2007-11-20
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Forward tunneling effect and metal-insulator transition in the BaTiO3 film/Si n-n heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/21/10.1063/1.2817936
10.1063/1.2817936
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