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Resistive switching properties of high crystallinity and low-resistance thin film with point-contacted Ag electrodes
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10.1063/1.2816124
/content/aip/journal/apl/91/22/10.1063/1.2816124
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2816124
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of PCMO thin film deposited on Pt electrode.

Image of FIG. 2.
FIG. 2.

(Color online) Illustrated , Pt/PCMO/Pt, and structured specimens and their resistances.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of interface of Ag paste electrode and PCMO thin film.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Single logarithmic plot of dc characteristic. (b) Double logarithmic plot of positive bias region of (a). (c) Double logarithmic plot of negative bias region of (a).

Image of FIG. 5.
FIG. 5.

(Color online) Bipolar resistive switching of structured specimen.

Image of FIG. 6.
FIG. 6.

(Color online) Retention property of HRS and LRS of structured specimen.

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/content/aip/journal/apl/91/22/10.1063/1.2816124
2007-11-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching properties of high crystallinity and low-resistance Pr0.7Ca0.3MnO3 thin film with point-contacted Ag electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2816124
10.1063/1.2816124
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