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Ultrahigh photocurrent gain in -axial GaN nanowires
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10.1063/1.2817595
/content/aip/journal/apl/91/22/10.1063/1.2817595
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2817595
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The FESEM image of the ensemble of GaN nanowires grown by thermal CVD method. [(b) and (c)] The HRTEM image and its corresponding SAD pattern focused on a single GaN nanowire.

Image of FIG. 2.
FIG. 2.

(Color online) A typical photocurrent spectrum of a single GaN nanowire with in diameter and in length at a bias of . Inset: a typical micrograph of the single nanowire device after patterning electrodes.

Image of FIG. 3.
FIG. 3.

(Color online) The photocurrent gain as a function of size for the GaN NWs (blue solid circles) and thin films (open purple diamonds) at applied field and excitation with power density. The effective size is defined by the values of the NW diameter and the film thickness. Three data points of thin film photoconductors are obtained from Ref. 12 (size at ), Ref. 13 (size at ), and our work (size at ).

Image of FIG. 4.
FIG. 4.

(Color online) The optical intensity-dependent gain of the GaN nanowires at excitation wavelength of and bias of . The red solid line shows a fitting to the power law , where of the experimental data.

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/content/aip/journal/apl/91/22/10.1063/1.2817595
2007-11-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrahigh photocurrent gain in m-axial GaN nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2817595
10.1063/1.2817595
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