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Solid-phase epitaxy of amorphous Si using single-crystalline Si nanowire seed templates
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) The growth schematic showing the successive two-step growth of core/ shell nanowire heterostructures. [(b)–(e)] Representative HRTEM images of nanowire heterostructures at different annealing temperatures (the scale bar is ). (b) the as-deposited nanowires consist of amorphous Si shells surrounding crystalline Si cores. The inset shows a lower magnification image. The structural evolutions of nanowire heterostructures upon thermal annealing at (c) for , (d) for , and (e) for . The scale bar of the inset of (d) is . The diffraction pattern in the inset of (e) represents twins in the fully crystallized nanowires.

Image of FIG. 2.
FIG. 2.

Histograms of core diameter distributions measured from shell/ core heterostructures (a) as it is deposited, (b) annealed at for , and (c) annealed at for . The histogram filled with declined lines in (a) shows the outer diameter distribution of shell/ core structures. The smooth curves are Gaussian fits.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the SPE growth velocity in amorphous Si shell deposited on nanowires (◼), compared with those of others’ (○) evaporated amorphous Si, where the columnar epitaxial growth occurs upon annealing at (by Huang et al.), (▵) evaporated amorphous Si upon annealing at (by von Allmen et al.), (◇) surface of amorphous Si after air exposure (by Bean and Poate), (▿) amorphous Si layer containing oxygen content of (by Foti et al.), (◁) amorphous Si layers in which oxygen with is ion implanted (by Kennedy et al.), and (…) amorphous Si deposited by vacuum evaporation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Solid-phase epitaxy of amorphous Si using single-crystalline Si nanowire seed templates