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Influence of lateral crystallization on gate oxide in polycrystalline silicon thin-film transistors
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10.1063/1.2817740
/content/aip/journal/apl/91/22/10.1063/1.2817740
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2817740
/content/aip/journal/apl/91/22/10.1063/1.2817740
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/content/aip/journal/apl/91/22/10.1063/1.2817740
2007-11-29
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of lateral crystallization on gate oxide in polycrystalline silicon thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2817740
10.1063/1.2817740
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