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Enhancement of field effect mobility of poly(3-hexylthiophene) thin film transistors by soft-lithographical nanopatterning on the gate-dielectric surface
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10.1063/1.2818662
/content/aip/journal/apl/91/22/10.1063/1.2818662
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2818662

Figures

Image of FIG. 1.
FIG. 1.

(Color online) FE-SEM images of OTS patterns with different line pitches, (a) , (b) , and (c) . (d) Highly iridescent diffraction color of uniformly patterned OTS line pattern over the large area of . . (e) Water contact angle as a function of patterned OTS line spacing including a typical SAM-treated substrate (an untreated case, 60°).

Image of FIG. 2.
FIG. 2.

(Color online) (a) Saturated transfer ( vs at ) and (b) output ( vs at ) characteristics of P3HT-based TFT devices with various substrates. (Channel length , channel width .)

Image of FIG. 3.
FIG. 3.

(Color online) (a) The out-of plane XRD results for various surface treatment conditions.

Image of FIG. 4.
FIG. 4.

(Color online) AFM image of the typical spaced OTS line pattern on the substrate (a) before and (b) after the spin-coating process with a toluene solvent.

Tables

Generic image for table
Table I.

Device characteristics of P3HT-based field-effect transistor on various substrates (channel length and channel width , ).

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/content/aip/journal/apl/91/22/10.1063/1.2818662
2007-11-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of field effect mobility of poly(3-hexylthiophene) thin film transistors by soft-lithographical nanopatterning on the gate-dielectric surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2818662
10.1063/1.2818662
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