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(Color online) FE-SEM images of OTS patterns with different line pitches, (a) , (b) , and (c) . (d) Highly iridescent diffraction color of uniformly patterned OTS line pattern over the large area of . . (e) Water contact angle as a function of patterned OTS line spacing including a typical SAM-treated substrate (an untreated case, 60°).
(Color online) (a) Saturated transfer ( vs at ) and (b) output ( vs at ) characteristics of P3HT-based TFT devices with various substrates. (Channel length , channel width .)
(Color online) (a) The out-of plane XRD results for various surface treatment conditions.
(Color online) AFM image of the typical spaced OTS line pattern on the substrate (a) before and (b) after the spin-coating process with a toluene solvent.
Device characteristics of P3HT-based field-effect transistor on various substrates (channel length and channel width , ).
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