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Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices
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10.1063/1.2819092
/content/aip/journal/apl/91/22/10.1063/1.2819092
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2819092
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic energy band diagram of fully programed charge trapping flash memory capacitor under negative gate voltage with optical excitation .

Image of FIG. 2.
FIG. 2.

(Color online) (a) Fully programed and fully erased curves of the charge trapping MONOS flash memory capacitor with under dark and under optical illumination having and . Insets are the structure for measuring optical capacitance-voltage response in MONOS charge trapped flash memory capacitor and equivalent capacitance model for the charge trapped flash memory capacitor with optical illumination. changes with program and erase states.

Image of FIG. 3.
FIG. 3.

(Color online) curves as a function of the surface potential converted from the gate voltage with converted surface potential converted from the gate voltage as an inset.

Image of FIG. 4.
FIG. 4.

(Color online) Energy distribution of trap density at layer using the proposed optical capacitance-voltage method comparatively plotted with previously reported data from White et al. (Ref. 5) and Kim et al. (Ref. 6).

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/content/aip/journal/apl/91/22/10.1063/1.2819092
2007-11-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2819092
10.1063/1.2819092
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