1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Epitaxial growth and structural analysis of heterostructures
Rent:
Rent this article for
USD
10.1063/1.2819616
/content/aip/journal/apl/91/22/10.1063/1.2819616
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2819616
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD (a) on-axis and (b) off-axis scan profiles of the AlN films grown on GaN/Sapphire (0001) substrates. The insets show the contour profile of the AlN {0002} (top) and (bottom) pole figures.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional TEM image of the /Sapphire heterostructures. (b) HRTEM image of the interface. (c) The SAED patterns taken at the interface [denoted by dotted circle in (a)]. The zone axis is

Image of FIG. 3.
FIG. 3.

(Color online) WH plots for the reflections of AlN and GaN layers. (b) The FWHMs (B) of scan as a function of of the diffraction planes with respect to the surface normal. [(c) and (d)] RSMs around 0002 and Bragg peaks of the AlN and GaN layers, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) curves of the heterostructures. (b) Room-temperature UV-vis transmittance spectra of /sapphire, AlN/sapphire, and GaN/sapphire structures.

Loading

Article metrics loading...

/content/aip/journal/apl/91/22/10.1063/1.2819616
2007-11-30
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth and structural analysis of AlN∕GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2819616
10.1063/1.2819616
SEARCH_EXPAND_ITEM