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Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon
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10.1063/1.2820383
/content/aip/journal/apl/91/22/10.1063/1.2820383
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2820383
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Current density–voltage curves of a control sample on -type Si without RTP and that processed in RTP at for . The is for the MOS capacitors.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM of the same RTP-processed sample shown in Fig. 1. The oxide thickness is the same as that measured using ellipsometry. This verifies that the leakage current reduction is not caused by thickness increase.

Image of FIG. 3.
FIG. 3.

(Color online) Leakage current density of silicon oxynitride with ( and physical ) on with a flatband voltage annealed using RTP in pure (research grade).

Image of FIG. 4.
FIG. 4.

(Color online) RTP treatment of on at for in pure He leads to high leakage current while RTP treatment at for in He mixed with 0.42% leads to reduced leakage current. is after RTP. The is for the MOS capacitors.

Image of FIG. 5.
FIG. 5.

(Color online) High-frequency capacitance-voltage curves of the control sample and the sample treated in RTP at for in He mixed with 0.42% , as shown in Fig. 4. The diameter of the circular dots is .

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/content/aip/journal/apl/91/22/10.1063/1.2820383
2007-11-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/22/10.1063/1.2820383
10.1063/1.2820383
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