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High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography
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10.1063/1.2814032
/content/aip/journal/apl/91/23/10.1063/1.2814032
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2814032
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Back-reflection images of dislocations in with densities (a) and (b). Imaging distance . micropipes, BPDs, and phase contrast images from defects of the beryllium windows used at the beamline.

Image of FIG. 2.
FIG. 2.

(a) Magnified dislocation images from Fig. 1(a) . The diffraction intensity falls from maximum to zero across the periphery of the white center within . (b) Simulated image. (c) Variation of the image diameters of SSDs with . Inset shows the back-reflection geometry.

Image of FIG. 3.
FIG. 3.

(a) Two kinds of BPD contrast in back-reflection topograph. . (b) Contrast mechanisms of edge-type dislocations with opposite Burgers vectors. (c) and (d) are the simulated images of edge dislocations with and , respectively.

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/content/aip/journal/apl/91/23/10.1063/1.2814032
2007-12-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2814032
10.1063/1.2814032
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