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High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography
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10.1063/1.2814032
/content/aip/journal/apl/91/23/10.1063/1.2814032
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2814032
/content/aip/journal/apl/91/23/10.1063/1.2814032
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/content/aip/journal/apl/91/23/10.1063/1.2814032
2007-12-04
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-geometrical-resolution imaging of dislocations in SiC using monochromatic synchrotron topography
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2814032
10.1063/1.2814032
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