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Degradation of low frequency noise in SiGe- and SiGeC-surface channel -type metal-oxide-semiconductor field effect transistor due to consuming the Si cap
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10.1063/1.2819071
/content/aip/journal/apl/91/23/10.1063/1.2819071
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2819071
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM images of cross-sectional view for (a) and (b) channel .

Image of FIG. 2.
FIG. 2.

(Color online) Dependency of linear drive current and transconductance on gate voltage bias for various channel devices.

Image of FIG. 3.
FIG. 3.

(Color online) Dependency of low frequency noise on gate overdrive voltage (the inset shows the low frequency noise spectra of the compared to the theoretical spectrum).

Image of FIG. 4.
FIG. 4.

(Color online) Charge pumping measurement of different -channel MSOFETs using bilevel square waveform at .

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/content/aip/journal/apl/91/23/10.1063/1.2819071
2007-12-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2819071
10.1063/1.2819071
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