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Degradation of low frequency noise in SiGe- and SiGeC-surface channel -type metal-oxide-semiconductor field effect transistor due to consuming the Si cap
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10.1063/1.2819071
/content/aip/journal/apl/91/23/10.1063/1.2819071
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2819071
/content/aip/journal/apl/91/23/10.1063/1.2819071
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/content/aip/journal/apl/91/23/10.1063/1.2819071
2007-12-06
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2819071
10.1063/1.2819071
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