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Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source
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10.1063/1.2819532
/content/aip/journal/apl/91/23/10.1063/1.2819532
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2819532
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage characteristics of a typical batch of junctions. Junction area is about , for a normal resistance of (critical current density ). The Josephson current has been suppressed with a magnetic field. Inset shows characteristics of SIS junctions with of 130 and . For the latter thermal heating causes gap suppression and back bending.

Image of FIG. 2.
FIG. 2.

(Color online) product as a function of nitridation time for nine different fabricated batches. The squares represent data for a chuck-source distance, whereas the diamonds indicate a chuck-source distance. The open circle represents the junctions of Fig. 1. Dashed lines indicate both a dependence . Inset: Quality factor as a function of product for two batches of junctions (up- and down-pointing triangles). Also indicated are data from Miller et al. (Ref. 14) (filled circles).

Image of FIG. 3.
FIG. 3.

(Color online) HRTEM micrographs of an AlN dielectric barrier deposited on an Al layer (bright region) between Nb electrodes (dark regions). The bar in the top-right corner represents a length of .

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/content/aip/journal/apl/91/23/10.1063/1.2819532
2007-12-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2819532
10.1063/1.2819532
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