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Conduction band offset at the heterojunction
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10.1063/1.2821378
/content/aip/journal/apl/91/23/10.1063/1.2821378
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2821378

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) The device structure of Schottky diode and (b) corresponding band diagram. (c) measurement of the Schottky diode from structure A.

Image of FIG. 2.
FIG. 2.

(Color online) (a) measurements of diodes. (b) square root of photocurrent vs photon energy.

Image of FIG. 3.
FIG. 3.

(Color online) The band alignment and charge diagram of InN and at (a) no bias and (b) . In the photocurrent spectroscopy, possible optically introduced transitions for the heterojunction are plotted in (a).

Tables

Generic image for table
Table I.

InN and GaN band offset calculations. : without considering the shift in the band bending in InN from defects in InN near the interface. : after estimating the band bending due to charged dislocations in InN near the interface (unit: eV).

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/content/aip/journal/apl/91/23/10.1063/1.2821378
2007-12-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conduction band offset at the InN∕GaN heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2821378
10.1063/1.2821378
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