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Substrate removal for high quantum efficiency back side illuminated type-II photodetectors
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10.1063/1.2821834
/content/aip/journal/apl/91/23/10.1063/1.2821834
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2821834
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Sketch of the structure of the miniarray after substrate removal. (b) Microscope picture of the etch stop after substrate removal.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Quantum efficiency of sample A at . (b) Quantum efficiency of sample B at . Diode 2 is the device with the higher contact area over optical area ratio (0.87). Diode 1 is a diode with a lower contact area over optical area ratio (0.56). The oscillations of diode 1 present more amplitude because the contact is an almost perfect mirror on the contrary to the interface between the superlattice and the epoxy.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Plot of the oscillations, maxima and minima of the simulated and measured values. (b) Simulated and experimental reflectivities.

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/content/aip/journal/apl/91/23/10.1063/1.2821834
2007-12-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Substrate removal for high quantum efficiency back side illuminated type-II InAs∕GaSb photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/23/10.1063/1.2821834
10.1063/1.2821834
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