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Very low noise at room temperature in fully epitaxial magnetic tunnel junctions
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Typical noise spectrum measured in A-MTJs in the P and AP states with a positive bias of . Field dependence of the normalized noise for (b) positive and (c) negative biases. The arrows show the direction of variation of the magnetic field.

Image of FIG. 2.
FIG. 2.

(a) Bias dependence of the Hooge parameter in the P and AP states in the A-MTJs, evaluated for the frequency range of (left axis), and TMR vs bias (right axis). (b) Bias dependence of the normalized dispersion of the Hooge parameter in the AP and P states of the A-MTJs evaluated outside the transition regions between P and AP configurations.

Image of FIG. 3.
FIG. 3.

Normalized noise measured at (a) and zero-bias TMR (b) as a function of product. The dashed line (part a) indicates the lowest Hooge factor value previously reported for MTJs with product within the wide range between and (see Ref. 13).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very low 1∕f noise at room temperature in fully epitaxial Fe∕MgO∕Fe magnetic tunnel junctions