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Improved device performance of quantum dot solar cells with GaP strain compensation layers
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10.1063/1.2816904
/content/aip/journal/apl/91/24/10.1063/1.2816904
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2816904
/content/aip/journal/apl/91/24/10.1063/1.2816904
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/content/aip/journal/apl/91/24/10.1063/1.2816904
2007-12-14
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2816904
10.1063/1.2816904
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