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Improved device performance of quantum dot solar cells with GaP strain compensation layers
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10.1063/1.2816904
/content/aip/journal/apl/91/24/10.1063/1.2816904
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2816904

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of the QD solar cell containing three-stack InAs QDs.

Image of FIG. 2.
FIG. 2.

Room temperature PL spectra from the test samples with (open circles) and without (solid line) SC layers.

Image of FIG. 3.
FIG. 3.

(Color online) characteristics of three-stack QD solar cells with and without SC layers and a GaAs control cell under AM at illumination. For strain compensation 2, 4, and two 2 ML of GaP have been used between two successive QD stacks.

Image of FIG. 4.
FIG. 4.

(Color online) External quantum efficiency (EQE) measurements of three-stack QD solar cells with and without SC layers and a GaAs control cell.

Tables

Generic image for table
Table I.

Measured open circuit voltages , short circuit current densities , and fill factors (FFs) of GaAs control cells and InAs QD solar cells with and without SC layers under AM 1.5G at light intensity.

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/content/aip/journal/apl/91/24/10.1063/1.2816904
2007-12-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2816904
10.1063/1.2816904
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