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Spin-dependent scattering off neutral antimony donors in field-effect transistors
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10.1063/1.2817966
/content/aip/journal/apl/91/24/10.1063/1.2817966
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2817966
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic cross section of an aFET, (b) device placement and field orientations in the ESR microwave resonator, and (c) magnified view of an aFET chip.

Image of FIG. 2.
FIG. 2.

(Color online) (a) EDMR spectrum from an -doped aFET at ( , ). (b) EDMR spectra for a series of gate voltages. Only the inner two donor hyperfine-split peaks are shown for clarity. (c) The same EDMR spectra as (b) with the y axis magnified tenfold to highlight the peaks.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Gate voltage dependence of EDMR signals ( , ) and (b) microwave power dependence of EDMR signals ( and ).

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/content/aip/journal/apl/91/24/10.1063/1.2817966
2007-12-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin-dependent scattering off neutral antimony donors in Si28 field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2817966
10.1063/1.2817966
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