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Schottky barrier height tuning of silicide on
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10.1063/1.2820386
/content/aip/journal/apl/91/24/10.1063/1.2820386
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2820386
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Variation of sheet resistance with annealing temperature for nickel silicide film on and . Silicidation is done using RTA for in ambient at the specified temperature. (b) XRD phase analysis of NiSi on and . Silicidation is done using RTA at for in ambient.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics of NiSi on with , , , and . Silicidation is done using RTA at for in ambient.

Image of FIG. 3.
FIG. 3.

(a) Experimental variation of SBH of NiSi with percentage carbon concentration and extrapolation of the linear fit to . Error bar at each data point corresponds to the statistical variation in SBH about its mean value. The inset shows the drop in SBH with in-plane tensile strain . (b) Projected linear variation of SBH of with percentage carbon concentration.

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/content/aip/journal/apl/91/24/10.1063/1.2820386
2007-12-14
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Schottky barrier height tuning of silicide on Si1−xCx
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/24/10.1063/1.2820386
10.1063/1.2820386
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